Study of charge trapping instabilities in Si//xN/InP MIS structure by constant capacitance method.

Title
Study of charge trapping instabilities in Si//xN/InP MIS structure by constant capacitance method.
Authors
강광남이정일C. H. Kim한일기C. ChoeH. Lim
Keywords
MIS structure
Issue Date
1992-01
Publisher
Journal of applied physics
Citation
v. 72, no. 10, 4743-?
URI
http://pubs.kist.re.kr/handle/201004/11093
Appears in Collections:
KIST Publication > Article
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