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dc.contributor.author강광남-
dc.contributor.author이정일-
dc.contributor.authorC. H. Kim-
dc.contributor.author한일기-
dc.contributor.authorC. Choe-
dc.contributor.authorH. Lim-
dc.date.accessioned2015-12-02T04:57:13Z-
dc.date.available2015-12-02T04:57:13Z-
dc.date.issued199201-
dc.identifier.citationv. 72, no. 10, 4743-?-
dc.identifier.other2704-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/11093-
dc.publisherJournal of applied physics-
dc.subjectMIS structure-
dc.titleStudy of charge trapping instabilities in Si//xN/InP MIS structure by constant capacitance method.-
dc.typeArticle-
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