Temperature dependence of photoluminescence for GaAs/AlGaAs single quantum well grown by MOCVD with and without growth-interuption.

Title
Temperature dependence of photoluminescence for GaAs/AlGaAs single quantum well grown by MOCVD with and without growth-interuption.
Authors
김성일민석기김용김무성엄경숙김영덕이민석
Keywords
MOCVD; GaAs; temperature; PL
Issue Date
1992-01
Publisher
Bull. Korean phys. soc.
Citation
v. 10, no. 2, 249-?
URI
http://pubs.kist.re.kr/handle/201004/11100
Appears in Collections:
KIST Publication > Article
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