Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiN//x capping layer for dielectric cap quantum well disordering

Title
Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiN//x capping layer for dielectric cap quantum well disordering
Authors
최원준한상민S.I. Shah최석근우덕하이석김회종한일기이정일강광남조재원
Keywords
Quantum well disordering; Hydogen content in capping layer; Photonic Interated circuit
Issue Date
1998-01
Publisher
Materials Research Society Symposium
Citation
VOL 484, 419-424
URI
http://pubs.kist.re.kr/handle/201004/11122
Appears in Collections:
KIST Publication > Conference Paper
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