The characteristics of In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors illuminated by laser

Other Titles
레이저에 의해 조사된 In0.52Al0.48As/In0.53Ga0.47As HBT의 특성
Authors
KIM JONG WOOK강현일오재응KIM HWE JONGChoi Won JunLee SeokHan Il KiWoo Deok HaLee Jung IlKim Sun HoKANG KWANG NHAM
Citation
제 4 회 한국 반도체 학술대회 논문집, pp.105 - 106
Keywords
HBT; InAlAs/InGaAs; 광특성
URI
https://pubs.kist.re.kr/handle/201004/111321
Appears in Collections:
KIST Conference Paper > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE