Dielectric cap disordering of InGaAs/InP quantum well by PECVD grown SiN and SiO2.

Authors
KANG KWANG NHAMKIM HWE JONGW. J. ChoiLee SeokD. WooHan Il KiS. K. KimS. H. KimLee Jung Il
Citation
ISIST '96(International symposium on information science and technology), pp.61 - 63
Keywords
양자우물 무질서화
URI
https://pubs.kist.re.kr/handle/201004/111680
Appears in Collections:
KIST Conference Paper > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE