The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization.

Authors
Kim Yong TaeC. S. KwonD. J. KimJ. Y. LeeI. H. Choi
Citation
Proc. of the 2nd Korea-China symp. on ion beam modification of materials and thin film materials, pp.?
URI
https://pubs.kist.re.kr/handle/201004/111809
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KIST Conference Paper > Others
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