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Lateral growth rate control of GaAs and AlGaAs by CCl//4 during MOCVD on patterned substrates.

Authors

Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; KANG JOON MO; 황성민; 박양근

Citation

The 2nd Korean semiconductor conference, pp.393 - 394

Keywords

MOCVD

URI

https://pubs.kist.re.kr/handle/201004/111963

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KIST Conference Paper > Others

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