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dc.contributor.authorKim Yong Tae-
dc.contributor.author이창우-
dc.contributor.author박상규-
dc.contributor.authorMin Suk-Ki-
dc.date.accessioned2024-01-13T22:30:33Z-
dc.date.available2024-01-13T22:30:33Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/112061-
dc.languageEnglish-
dc.titleCharacteristics of amorphous tungsten nitride diffusion barrier for metal-organic chemical vapor deposited Cu metallization.-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationInt'l electron devices and materials symp., pp.?-
dc.citation.titleInt'l electron devices and materials symp.-
dc.citation.startPage?-
dc.citation.endPage?-
dc.citation.conferencePlaceCH-
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KIST Conference Paper > Others
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