Characteristics of heavily carbon doped GaAs by LPMOCVD and critical layer thickness.

Title
Characteristics of heavily carbon doped GaAs by LPMOCVD and critical layer thickness.
Authors
김용김성일엄경숙이주천곽명현마동성김무성민석기
Keywords
carbon doping; MOCVD; GaAs
Issue Date
1993-01
Publisher
Journal of crystal growth
Citation
v. 126, 441-446
URI
http://pubs.kist.re.kr/handle/201004/11213
ISSN
0022-0248
Appears in Collections:
KIST Publication > Article
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