Study on the lateral island extension for growth-intersupted GaAs/Al0.3Ga0.7As single quantum wells grown by atmospheric-pressure metalorganic chemical vapor deposition

Title
Study on the lateral island extension for growth-intersupted GaAs/Al0.3Ga0.7As single quantum wells grown by atmospheric-pressure metalorganic chemical vapor deposition
Authors
김용김성일김무성민석기이민석김영덕
Keywords
lateral island extension; MOCVD; GaAs/AlGaAs
Issue Date
1993-01
Publisher
Journal of Korean applied physics
Citation
v. 26, no. 6, 705-709
URI
http://pubs.kist.re.kr/handle/201004/11218
Appears in Collections:
KIST Publication > Article
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