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Undoped and Si-doped GaAs layer grown at low temperature by molecular beam epitaxy.

Authors

KIM EUN KYU; Min Suk-Ki; T. G. Kim; H. Y. Cho; H. S. Kim; J. H. Park

Citation

Proc. KITE summer conf. '92, v.v. 15, no.no. 1, pp.298 - 301

Keywords

GaAs epilayer; low temperature growth; molecular beam epitaxy

URI

https://pubs.kist.re.kr/handle/201004/112385

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KIST Conference Paper > Others

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