Growth and characterization of GaAs layer by molecular beam epitaxy.

Authors
KIM EUN KYUMin Suk-KiS. W. LeeH. Y. ChoH. S. KimJ. H. Park
Citation
Proc. KITE summer conf. '92, v.v. 15, no.no. 1, pp.329 - 332
Keywords
GaAs layer; molecular beam epitaxy; characterization
URI
https://pubs.kist.re.kr/handle/201004/112386
Appears in Collections:
KIST Conference Paper > Others
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