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Rapid thermal annealing dependence of deep electron traps in GaAs-on-Si grown by MOCVD.

Authors

KIM EUN KYU; CHO HOON YOUNG; KIM YOUN; 김현수; Min Suk-Ki; M. S. Kim

Citation

Proc. 4th Asia Pacific phys. conf., v.v. 1, pp.584 - 587

Keywords

rapid thermal annealing; deep electron trap; GaAs-on-Si; MOCVD

URI

https://pubs.kist.re.kr/handle/201004/112523

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KIST Conference Paper > Others

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