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Fabrication of quantum well high electron mobility transistor grown by MOCVD.

Authors

Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; K. H. Yoo; G. Ihm; S. K. Noh

Citation

Bull. Korean phys. soc., v.v. 9, no.no. 2, pp.305 - ?

Keywords

MOCVD; GaAs; HEMT

URI

https://pubs.kist.re.kr/handle/201004/112538

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KIST Conference Paper > Others

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