Impurity free quantum well disordering by rapid thermal annealing (RTA) using plasma enhanced chemical vapor deposited (PECVD) SiN//x capping layer.

Title
Impurity free quantum well disordering by rapid thermal annealing (RTA) using plasma enhanced chemical vapor deposited (PECVD) SiN//x capping layer.
Authors
강광남최원준이석김용김상국김회종우덕하조규만
Keywords
quantum well disordering
Issue Date
1994-01
Publisher
Bull. Korean phys. soc.
Citation
v. 12, no. 1, 128-?
URI
http://pubs.kist.re.kr/handle/201004/11296
Appears in Collections:
KIST Publication > Article
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