Selective Laser-Assisted Direct Synthesis of MoS2 for Graphene/MoS2 Schottky Junction
- Authors
- Jeon, Min Ji; Hyeong, Seok-Ki; Jang, Hee Yoon; Mun, Jihun; Kim, Tae-Wook; Bae, Sukang; Lee, Seoung-Ki
- Issue Date
- 2023-11
- Publisher
- MDPI
- Citation
- Nanomaterials, v.13, no.22
- Abstract
- Implementing a heterostructure by vertically stacking two-dimensional semiconductors is necessary for responding to various requirements in the future of semiconductor technology. However, the chemical-vapor deposition method, which is an existing two-dimensional (2D) material-processing method, inevitably causes heat damage to surrounding materials essential for functionality because of its high synthesis temperature. Therefore, the heterojunction of a 2D material that directly synthesized MoS2 on graphene using a laser-based photothermal reaction at room temperature was studied. The key to the photothermal-reaction mechanism is the difference in the photothermal absorption coefficients of the materials. The device in which graphene and MoS2 were vertically stacked using a laser-based photothermal reaction demonstrated its potential application as a photodetector that responds to light and its stability against cycling. The laser-based photothermal-reaction method for 2D materials will be further applied to various fields, such as transparent display electrodes, photodetectors, and solar cells, in the future.
- Keywords
- CONTACT RESISTANCE; TRANSISTORS; HYDROGEN; GROWTH; FILMS; HETEROSTRUCTURES; TRANSITION; DEVICES; BULK; selective laser annealing; graphene; molybdenum disulfide (MoS2); photothermal reaction; heterostructure; photodetector
- ISSN
- 2079-4991
- URI
- https://pubs.kist.re.kr/handle/201004/113087
- DOI
- 10.3390/nano13222937
- Appears in Collections:
- KIST Article > 2023
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.