Selective Laser-Assisted Direct Synthesis of MoS2 for Graphene/MoS2 Schottky Junction

Authors
Jeon, Min JiHyeong, Seok-KiJang, Hee YoonMun, JihunKim, Tae-WookBae, SukangLee, Seoung-Ki
Issue Date
2023-11
Publisher
MDPI
Citation
Nanomaterials, v.13, no.22
Abstract
Implementing a heterostructure by vertically stacking two-dimensional semiconductors is necessary for responding to various requirements in the future of semiconductor technology. However, the chemical-vapor deposition method, which is an existing two-dimensional (2D) material-processing method, inevitably causes heat damage to surrounding materials essential for functionality because of its high synthesis temperature. Therefore, the heterojunction of a 2D material that directly synthesized MoS2 on graphene using a laser-based photothermal reaction at room temperature was studied. The key to the photothermal-reaction mechanism is the difference in the photothermal absorption coefficients of the materials. The device in which graphene and MoS2 were vertically stacked using a laser-based photothermal reaction demonstrated its potential application as a photodetector that responds to light and its stability against cycling. The laser-based photothermal-reaction method for 2D materials will be further applied to various fields, such as transparent display electrodes, photodetectors, and solar cells, in the future.
Keywords
CONTACT RESISTANCE; TRANSISTORS; HYDROGEN; GROWTH; FILMS; HETEROSTRUCTURES; TRANSITION; DEVICES; BULK; selective laser annealing; graphene; molybdenum disulfide (MoS2); photothermal reaction; heterostructure; photodetector
ISSN
2079-4991
URI
https://pubs.kist.re.kr/handle/201004/113087
DOI
10.3390/nano13222937
Appears in Collections:
KIST Article > 2023
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