Ultrathin Crystalline Silicon Nano and Micro Membranes with High Areal Density for Low-Cost Flexible Electronics

Authors
Lee, Ju YoungShin, JongwoonKim, KyubeenJu, Jeong EunDutta, AnkanKim, Tae SooCho, Young UkKim, TaeminHu, LuhingMin, Won KyungJung, Hyun-SuhPark, Young SunWon, Sang MinYeo, Woon-HongMoon, JoohoKhang, Dahl-YoungKim, Hyun JaeAhn, Jong-HyunCheng, HuanyuYu, Ki JunRogers, John A.
Issue Date
2023-09
Publisher
Wiley - V C H Verlag GmbbH & Co.
Citation
Small, v.19, no.39
Abstract
Ultrathin crystalline silicon is widely used as an active material for high-performance, flexible, and stretchable electronics, from simple passive and active components to complex integrated circuits, due to its excellent electrical and mechanical properties. However, in contrast to conventional silicon wafer-based devices, ultrathin crystalline silicon-based electronics require an expensive and rather complicated fabrication process. Although silicon-on-insulator (SOI) wafers are commonly used to obtain a single layer of crystalline silicon, they are costly and difficult to process. Therefore, as an alternative to SOI wafers-based thin layers, here, a simple transfer method is proposed for printing ultrathin multiple crystalline silicon sheets with thicknesses between 300 nm to 13 mu m and high areal density (>90%) from a single mother wafer. Theoretically, the silicon nano/micro membrane can be generated until the mother wafer is completely consumed. In addition, the electronic applications of silicon membranes are successfully demonstrated through the fabrication of a flexible solar cell and flexible NMOS transistor arrays.
Keywords
THIN-FILM TRANSISTORS; SEMICONDUCTOR GROWTH; SOLAR-CELLS; OXIDE; SURFACE; ARRAYS; ORIENTATION; FABRICATION; CHALLENGES; INTERFACE; flexible electronics; reusable silicon; semiconductor electronics applications; silicon nano; micro membrane sheet transfer
ISSN
1613-6810
URI
https://pubs.kist.re.kr/handle/201004/113364
DOI
10.1002/smll.202302597
Appears in Collections:
KIST Article > 2023
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