Synthesis and polymorphism of a new phase 1D chalcogenide M2N3X8 structure based on the periodic table: Ta2Ni3S8 with a tetragonal structure

Authors
Jeon, JihoWoo, ChaeheonChoi, Kyung HwanJeong, Byung JooKang, JinsuZhang, XiaojieDong, XueKim, Tae YeongAhn, JungyoonOh, Hyung-SukYu, Hak KiChoi, Jae -Young
Issue Date
2022-12
Publisher
Elsevier BV
Citation
Journal of Alloys and Compounds, v.926
Abstract
For the first time, a new structure of Ta2Ni3S8, one of the family systems of M2N3X8, a recently studied one-dimensional chalcogenide material, was synthesized. Unlike Ta2Ni3S8 in the orthorhombic phase, which is known to have semiconductor properties, Ta2Ni3S8 in the tetragonal phase displayed metallic material properties. Structural analysis through X-ray diffraction confirmed that the tetragonal Ta2Ni3S8 (T-Ta2Ni3S8) had the same structure as the tetragonal Ta2Ni3Se8 (T-Ta2Ni3Se8), a material with an S-and Se-substitution; the only difference was the lattice constant. Additionally, different elemental analyses were used to confirm that the ratio of Ta:Ni:S elements was 2:3:8. This study is significant as basic research that can be applied to various electronic devices by applying bandgap tuning and lattice-matched electrode design based on M2N3X8 family material.(c) 2022 Elsevier B.V. All rights reserved.
Keywords
SINGLE-LAYER; MOS2; TRANSITION; Polymorphism; Low-dimensional materials; 1D chalcogenide M2N3X8; Ta2Ni3S8
ISSN
0925-8388
URI
https://pubs.kist.re.kr/handle/201004/114266
DOI
10.1016/j.jallcom.2022.166752
Appears in Collections:
KIST Article > 2022
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