Carrier lifetime in dielectric cap disordered GaAs/AlGaAs quantum well by SiN capping layer.

Title
Carrier lifetime in dielectric cap disordered GaAs/AlGaAs quantum well by SiN capping layer.
Authors
W. J. Choi이석D. Woo이정일S. K. KimJ. H. ChuS. K. Yu강광남D. KimK. Cho
Keywords
quantum well disordering
Issue Date
1995-01
Publisher
CLEO/QELS '95, Baltimore, USA
Citation
, ?-?
URI
http://pubs.kist.re.kr/handle/201004/11434
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE