Heat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs

Authors
Kim, SangHyeonKim, Seong KwangShin, SangHoonHan, Jae-HoomGrum, Dae-MyeongKim, Hyung-junLee, SubinKim, Han SungJu, GunwuSong, Jin DongAlam, Muhammad A.Shim, Jae-Phil
Issue Date
2018-10
Publisher
IEEE
Citation
IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
ISSN
2573-5926
URI
https://pubs.kist.re.kr/handle/201004/114340
Appears in Collections:
KIST Conference Paper > 2018
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