Enhanced Photoluminescence of 1.3μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission

Authors
Kim, YeonhwaChu, Rafael Jumar AbellaRyu, GeunhwanWoo, SeungwanLung, Quang Nhat DangAhn, Dae-HwanHan, Jae-HoonChoi, Won JunJung, Daehwan
Issue Date
2022-09
Publisher
American Chemical Society
Citation
ACS Applied Materials & Interfaces, v.14, no.39, pp.45051 - 45058
Abstract
We report on the photoluminescence enhancement of 1.3 mu m InAs quantum dots (QDs) epitaxially grown on an ultrathin 250 nm GaAs buffer on a Si substrate. Decreasing the GaAs buffer thickness from 1000 to 250 nm was found to not only increase the coalesced QD density from 6.5 x 108 to 1.9 x 109 cm-2 but also decrease the QD photoluminescence emission intensity dramatically. Inserting an Al0.4Ga0.6As potential barrier layer maintained strong photoluminescence from the QDs by effectively suppressing carrier leakage to the GaAs/Si interfacial region even when the GaAs buffer was thinned to 250 nm. We then fabricated a light-emitting diode using the ultrathin 250 nm GaAs buffer on Si and confirmed strong electroluminescence peaking at 1.28 mu m without interfacial defect emission at room temperature. We believe that this work is promising for monolithically integrated evanescent Si lasers using InAs/GaAs QDs.
Keywords
SI; LASERS; ISLANDS; LAYERS; quantum dot; epitaxy; silicon photonics; photoluminescence; electroluminescence; defect
ISSN
1944-8244
URI
https://pubs.kist.re.kr/handle/201004/114568
DOI
10.1021/acsami.2c14492
Appears in Collections:
KIST Article > 2022
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