10-nm Fin-Width InGaSb p-Channel Self-Aligned FinFETs Using Antimonide-Compatible Digital Etch

Abstract

We have fabricated self-aligned InGaSb p-channel FinFETs using a novel antimonide-compatible digital etch. This is the first demonstration of digital etch on InGaSb-based transistors of any kind. It has enabled the first fabricated InGaSb FinFETs featuring fin widths down to 10 nm and gate lengths of 20 nm. Single fin transistors with W-f = 10 nm and channel height of 23 nm (fin aspect ratio of 2.3) have achieved a record transconductance of 160 mu S/mu m at V-DS = 0.5 V. When normalized to device footprint, it reaches a record high g(m)= 704 mu S/mu m. Digital etch has been shown to effectively improve the turn-off characteristics of the devices.