Plasma deposited amorphous tungsten nitride diffusion barrier for metal-organic chemical vapor deposited Cu metallization.

Title
Plasma deposited amorphous tungsten nitride diffusion barrier for metal-organic chemical vapor deposited Cu metallization.
Authors
김용태이창우
Keywords
amorphous PECVD-W//6//7N//3//3 layer
Issue Date
1995-01
Publisher
Journal of the Chinese institute of electrical engineering
Citation
v. 2, no. 1, 7-11
URI
http://pubs.kist.re.kr/handle/201004/11512
Appears in Collections:
KIST Publication > Article
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