Dislocation related defect states in GaN irradiated with 1 MeV electron-beam

Abstract

Undoped GaN layers with thickness of 278 mu m were grown by hydride vapor phase epitaxy method. The samples with different threading dislocation densities of 9.0x10(6) cm(-2) and 7.2x10(6) cm(-2) were irradiated by electron-beam with the energy of 1 MeV and dose of 1x10(15) cm(-2). The defect states of the samples after electron beam irradiation were characterized by deep level transient spectroscopy measurement. After the electron-beam irradiation, the the defects appeared to states with the activation energies of 0.61 eV, 0.30 eV, and 0.57 W.