High temperature stability of bulk Ti3SiC2 materials in air

Abstract

The Ti3SiC2 materials were synthesized by hot pressing TiCx and Si powder mixtures. The matrix grains were lamellar, having a small amount of TiCx. The high-temperature stability was investigated by subjecting Ti3SiC2 to high-temperature oxidation up to 1200 degrees C in air. Ti3SiC2 began to oxidize appreciably above 850 degrees C. The oxidation resulted in the formation of the oxide layer that consisted of TiO2 and SiO2 The scales formed were adherent.