Dielectric cap disordering of InGaAs/InP quantum well by PECVD grown SiN and SiO2.

Title
Dielectric cap disordering of InGaAs/InP quantum well by PECVD grown SiN and SiO2.
Authors
강광남김회종W. J. Choi이석D. Woo한일기S. K. KimS. H. Kim이정일
Keywords
양자우물 무질서화
Issue Date
1996-01
Publisher
ISIST '96(International symposium on information science and technology)
Citation
, 61-63
URI
http://pubs.kist.re.kr/handle/201004/11710
Appears in Collections:
KIST Publication > Conference Paper
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