Heavily carbon-doped GaAs epilayers grown on (100) and 2 ˚ off (100) GaAs substrates using carbon tetrabromide.

Title
Heavily carbon-doped GaAs epilayers grown on (100) and 2 ˚ off (100) GaAs substrates using carbon tetrabromide.
Authors
손창식김성일민병돈김은규민석기최인훈
Keywords
carbon
Issue Date
1996-01
Publisher
Japanese journal of applied physics
Citation
v. 35, no. 12B, 225-228
URI
http://pubs.kist.re.kr/handle/201004/11738
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE