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dc.contributor.author손창식-
dc.contributor.author김성일-
dc.contributor.author민병돈-
dc.contributor.author김은규-
dc.contributor.author민석기-
dc.contributor.author최인훈-
dc.date.accessioned2015-12-02T05:00:17Z-
dc.date.available2015-12-02T05:00:17Z-
dc.date.issued199601-
dc.identifier.citationv. 35, no. 12B, 225-228-
dc.identifier.other5684-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/11738-
dc.publisherJapanese journal of applied physics-
dc.subjectcarbon-
dc.titleHeavily carbon-doped GaAs epilayers grown on (100) and 2 ˚ off (100) GaAs substrates using carbon tetrabromide.-
dc.typeArticle-
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