Growth of TiO2 dielectric thin films on Si(100) substrates by metalorganic chemical vapor deposition and the electrical properties of the Al/TiO2/p-Si structures

Title
Growth of TiO2 dielectric thin films on Si(100) substrates by metalorganic chemical vapor deposition and the electrical properties of the Al/TiO2/p-Si structures
Authors
염상섭김은규민석기한영기임종수손맹호
Keywords
thin films; MOCVD; Si substrate; Al/TiO2 direct film; MIS structure
Issue Date
1996-07
Publisher
응용물리
Citation
VOL 9, NO 4, 495-499
URI
http://pubs.kist.re.kr/handle/201004/11908
ISSN
10137009
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE