Defect states and kinetic parameter analysis of ZnAl2O4 nanocrystals by X-ray photoelectron spectroscopy and thermoluminescence

Abstract

Defect states in ZnAl2O4 have a significant role in its applicability as a luminescent material. To understand the nature and distribution of defects in its crystal lattice, thermoluminescence (TL) study has been carried out. Excellent TL response is observed from gamma- and ultraviolet-irradiated samples at different doses and exposure durations, respectively. Different type of fuels employed in combustion synthesis show a remarkable effect on the trap distribution and hence luminescence properties. Shallow and deep traps are observed in crystals attributed to O- vacancies and F+ centers. The mechanism of trapping, retrapping and recombination have been depicted through schematic band model diagram. X-ray photoelectron spectroscopy indicated the presence of various types of defects specifically Al-Zn antisite defect, oxygen and zinc vacancies which are further upheld by photoluminescence and Raman spectroscopy. All results when summed up, predict ZnAl2O4 to be a quality material for dosimetry.