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dc.contributor.authorKim, Sunho-
dc.contributor.authorKim, Jungwoo-
dc.contributor.authorKim, Daekyoung-
dc.contributor.authorKim, Bongsung-
dc.contributor.authorChae, Heeyeop-
dc.contributor.authorYi, Hyunjung-
dc.contributor.authorHwang, Byungil-
dc.date.accessioned2024-01-19T19:33:08Z-
dc.date.available2024-01-19T19:33:08Z-
dc.date.created2021-09-02-
dc.date.issued2019-07-24-
dc.identifier.issn1944-8244-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/119766-
dc.description.abstractPatchable electrodes are attractive for applications in optoelectronic devices because of their easy and reliable processability. However, development of reliable patchable transparent electrodes (TEs) with high optoelectronic performance is challenging; till now, optoelectronic devices fabricated with patchable TEs have been exhibiting limited performance. In this study, Ag nanowire (AgNW)/poly(methyl methacrylate) (PMMA) patchable TEs are developed and the highly efficient transparent quantum dot light-emitting diodes (QLEDs) using the patchable TEs are fabricated. AgNWs with optimized optoelectronic properties (figure of merit 3.3 X 10(-2)) are coated by an ultrathin PMMA nanolayer and transferred to thermal release tapes that enable physical attachment of TEs on the QLEDs without a significant damage to the adjacent active layer. The transparent QLEDs using patchable transparent top electrodes display excellent performance, with the maximum total luminance and current efficiency of 27 310 cd.m(-2) and 45.99 cd.A(-1), respectively. Fabricated by all-solution-based processes, these QLEDs exhibit the best performance to date among devices adopting patchable top electrodes.-
dc.languageEnglish-
dc.publisherAmerican Chemical Society-
dc.subjectNANOWIRE ELECTRODE-
dc.subjectSOLAR-CELLS-
dc.subjectGRAPHENE-
dc.subjectNETWORK-
dc.subjectANODE-
dc.titleHigh-Performance Transparent Quantum Dot Light-Emitting Diode with Patchable Transparent Electrodes-
dc.typeArticle-
dc.identifier.doi10.1021/acsami.9b05969-
dc.description.journalClass1-
dc.identifier.bibliographicCitationACS Applied Materials & Interfaces, v.11, no.29, pp.26333 - 26338-
dc.citation.titleACS Applied Materials & Interfaces-
dc.citation.volume11-
dc.citation.number29-
dc.citation.startPage26333-
dc.citation.endPage26338-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000477787200076-
dc.identifier.scopusid2-s2.0-85070485695-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusNANOWIRE ELECTRODE-
dc.subject.keywordPlusSOLAR-CELLS-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusNETWORK-
dc.subject.keywordPlusANODE-
dc.subject.keywordAuthorsilver nanowire-
dc.subject.keywordAuthorpatchable-
dc.subject.keywordAuthortransparent-
dc.subject.keywordAuthorthermal release tape-
dc.subject.keywordAuthorquantum dot light-emitting diode-
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