Functionalized Bonding Materials and Interfaces for Heterogeneously Layer-Stacked Applications

Authors
Kim, SanghyeonHan, Jae-HoonChoi, Won JunSong, Jin DongKim, Hyung-jun
Issue Date
2019-01
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.74, no.2, pp.82 - 87
Abstract
Recently, heterogeneous integration has become more important in enhancing device performance and creating new functions. For this purpose, wafer bonding can provide a straightforward method to integrate different materials, regardless of lattice mismatch. Here, we review recent application spaces using low-temperature wafer bonding by classifying wafer bonding into direct bonding, oxide bonding, and metal bonding. We show that bonding materials and interfaces have an important role in achieving high-performance semiconductor devices.
Keywords
FIELD-EFFECT TRANSISTORS; GAAS SOLAR-CELL; SI SUBSTRATE; WAVE-GUIDES; MU-M; WAFER; GE; SILICON; MOSFETS; LASERS; FIELD-EFFECT TRANSISTORS; GAAS SOLAR-CELL; SI SUBSTRATE; WAVE-GUIDES; MU-M; WAFER; GE; SILICON; MOSFETS; LASERS; Wafer bonding; Heterogeneous integration; Bonding interface; Monolithic 3D integration
ISSN
0374-4884
URI
https://pubs.kist.re.kr/handle/201004/120522
DOI
10.3938/jkps.74.82
Appears in Collections:
KIST Article > 2019
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