Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing Si-rich SiN capping layer for dielectric cap quantum well disordering

Title
Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing Si-rich SiN capping layer for dielectric cap quantum well disordering
Authors
최원준김회종한상민Syed ljaz Shah최석근이석우덕하한일기김선호이정일강광남
Keywords
quantum well; disordering; SiN; interdiffusion
Issue Date
1997-12
Publisher
MRS (Material Research Society) 97 Fall meeting
Citation
, 1-?
URI
http://pubs.kist.re.kr/handle/201004/12154
Appears in Collections:
KIST Publication > Conference Paper
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