Fabrication of in-plane gated transistor with electron-beam lighography technique

Title
Fabrication of in-plane gated transistor with electron-beam lighography technique
Authors
한철구김광무정석구최범호김은규민석기박정호
Keywords
in-plane gated transistor; electron beam lithography; HEMT; MBE
Issue Date
1997-02
Publisher
Proc. 4th Korean conf. semiconductors.
Citation
, 437-438
URI
http://pubs.kist.re.kr/handle/201004/12172
Appears in Collections:
KIST Publication > Conference Paper
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