SiGeC alloy layer formation by high-dose C+ implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100)

Title
SiGeC alloy layer formation by high-dose C+ implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100)
Authors
S. Im송종한D.Y.C. LieF. EisenH. AtwaterM-A. Nicolet
Keywords
doping; SiGeC; ion implantation; strain
Issue Date
1997-02
Publisher
Journal of applied physics.
Citation
VOL 81, NO 4, 1700-1703
URI
http://pubs.kist.re.kr/handle/201004/12180
Appears in Collections:
KIST Publication > Article
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