A study on the relation between film quality and deposition rate for amorphous silicon films grown by electron cyclotron resonance plasma chemical vapor deposition using H2/SiH4

Title
A study on the relation between film quality and deposition rate for amorphous silicon films grown by electron cyclotron resonance plasma chemical vapor deposition using H2/SiH4
Authors
강문상김재영임태훈오인환전법주정일현안철
Keywords
elecron cyclotron resonance plasma chemical vapor deposition; hydrogenated amorphous silicon
Issue Date
1997-08
Publisher
Japanese Journal of Applied Physics, Part 2 - Letters
Citation
VOL 36, NO 8A, L986-L988
URI
http://pubs.kist.re.kr/handle/201004/12307
ISSN
0021-4922
Appears in Collections:
KIST Publication > Article
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