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dc.contributor.author이호녕-
dc.contributor.author김용태-
dc.contributor.author이창우-
dc.contributor.author임명호-
dc.contributor.authorT. S. Kalkur-
dc.date.accessioned2015-12-02T05:03:08Z-
dc.date.available2015-12-02T05:03:08Z-
dc.date.issued199709-
dc.identifier.citation, 382-383-
dc.identifier.other8050-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/12314-
dc.publisherProc. of solid state devices and materials-
dc.subjectMEFISFET-
dc.titleFabrication of metal-ferroelectric-insulator-semiconductor field effect transistor (MEFISFET) using Pt-SrBi//2Ta//2O//9-Y//2O//3-Si structure-
dc.typeConference Paper-
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