Correlation between the magnetic and thermoelectric properties in Mg2-xMnxSi

Authors
Kim, ChungmanKim, soo hyunHong, Yang-KiOh, Min-WookJung, Myung-Hwa
Issue Date
2017-01
Publisher
ELSEVIER SCIENCE SA
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v.690, pp.51 - 56
Abstract
Single crystals of Mg2-xMnxSi (x = 0, 0.1, 0.2, 0.3, and 0.4) were prepared using a vertical Bridgman method. The formation of desired materials was confirmed using single-crystal and powder X-ray diffraction. The thermoelectric and magnetic properties were investigated for various Mn contents in the temperature range between 2 and 300 K and in magnetic fields up to 70 kOe. For various x values, Mg2-xMnxSi with x = 0.2 possesses the highest figure of merit. The experimental results revealed that the Substitutional Mn atoms exhibit mixed valences of +3 (majority) and +2, giving rise to dramatic changes of carrier density and magnetic interaction. At the same time, the Seebeck coefficient and magnetic susceptibility show a sudden change at the same temperature. These results imply that the thermoelectric properties are correlated with the magnetic properties in the Mg2-xMnxSi crystals. (C) 2016 Elsevier B.V. All rights reserved.
Keywords
DOPED MG2SI SEMICONDUCTORS; SOLID-SOLUTION; P-TYPE; SB; BETA-FESI2; AL; BI; Thermoelectric materials; Magnetic properties; Mg2Si; Mn substitution
ISSN
0925-8388
URI
https://pubs.kist.re.kr/handle/201004/123227
DOI
10.1016/j.jallcom.2016.08.095
Appears in Collections:
KIST Article > 2017
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