Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Min, Jung-Hong | - |
dc.contributor.author | Seo, Tae Hoon | - |
dc.contributor.author | Choi, Sang-Bae | - |
dc.contributor.author | Kim, Kiyoung | - |
dc.contributor.author | Lee, Jun-Yeob | - |
dc.contributor.author | Park, Mun-Do | - |
dc.contributor.author | Kim, Myung Jong | - |
dc.contributor.author | Suh, Eun-Kyung | - |
dc.contributor.author | Kim, Jong-Ryeol | - |
dc.contributor.author | Lee, Dong-Seon | - |
dc.date.accessioned | 2024-01-20T03:04:26Z | - |
dc.date.available | 2024-01-20T03:04:26Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/123599 | - |
dc.description.abstract | We have demonstrated the effect of p-GaN hole concentration on a graphene current spreading layer (CSL) for stabilization and improved performance of a near-ultraviolet light-emitting diode (NUV LED). While NUV LEDs with a more lightly-doped p-GaN showed poor electrical and optical properties and unstable performance, NUV LEDs with more heavily-doped p-GaN (similar to 2 x 10(17) cm(-3)) showed very stable, outstanding performance. The main factor of the improvement was the enhanced contact property between the graphene CSLs and the p-GaN that resulted from the increase of the hole concentration, which led to a thinner barrier and an enhanced current injection. From our results, we were able to determine that hole concentration as heavy as 2 x 10(17) cm(-3) in p-GaN layers is a primary condition in NUV LEDs with graphene-based CSLs. (C) 2016 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Effect of p-GaN hole concentration on the stabilization and performance of a graphene current spreading layer in near-ultraviolet light-emitting diodes | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.cap.2016.08.006 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.16, no.10, pp.1382 - 1387 | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 16 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1382 | - |
dc.citation.endPage | 1387 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.identifier.kciid | ART002160548 | - |
dc.identifier.wosid | 000384132100019 | - |
dc.identifier.scopusid | 2-s2.0-84982095781 | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | p-GaN | - |
dc.subject.keywordAuthor | Hole concentration | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | Current spreading layer | - |
dc.subject.keywordAuthor | Light-emitting diode | - |
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