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dc.contributor.authorPark, Chan-Rok-
dc.contributor.authorMoon, Seon Young-
dc.contributor.authorPark, Da-Hee-
dc.contributor.authorKim, Shin-Ik-
dc.contributor.authorKim, Seong-Keun-
dc.contributor.authorKang, Chong-Yun-
dc.contributor.authorBaek, Seung-Hyub-
dc.contributor.authorChoi, Jung-Hae-
dc.contributor.authorKim, Jin-Sang-
dc.contributor.authorChoi, Eunsoo-
dc.contributor.authorHwang, Jin-Ha-
dc.date.accessioned2024-01-20T04:02:59Z-
dc.date.available2024-01-20T04:02:59Z-
dc.date.created2021-09-05-
dc.date.issued2016-06-
dc.identifier.issn0022-3697-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/124005-
dc.description.abstractFrequency-dependent impedance spectroscopy was applied to the 2-dimensioanl conduction transport in the LaAlO3/SrxCa1-xTiO3/SrTiO3 system. The 2-dimensional conduction modifies the electrical/dielectric responses of the LaAlO3/SrxCa1-xTiO3/SrTiO3 depending on the magnitude of the interfacial 2-dimensional resistance. The high conduction of the 2-dimensional electron gas (2DEG) layer can be described using a metallic resistor in series with two parallel RC circuits. However, the high resistance of the 2-dimensional layer drives the composite system from a finite low resistor in parallel with the surrounding dielectrics composed of LaAlO3 and SrTiO3 materials to a dielectric capacitor. This change in the resistance of the 2-dimensional layers modifies the overall impedance enabled by the presence of the interfacial layer due to SrxCa1-xTiO3, which alters the charge transport of the 2-dimensional layer from metallic to semiconducting conduction. A noticeable change is observed in the capacitance Bode plots, indicating highly amplified dielectric constants compared with the pristine SrTiO3 substrates and SrxCa1-xTiO3 with a greater Ca content. (C) 2016 Elsevier Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectLAALO3/SRTIO3-
dc.subjectINTERFACES-
dc.titleImpedance-based interpretations in 2-dimensional electron gas conduction formed in the LaAlO3/SrxCa1-xTiO3/SrTiO3 system-
dc.typeArticle-
dc.identifier.doi10.1016/j.jpcs.2016.02.017-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, v.93, pp.131 - 136-
dc.citation.titleJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS-
dc.citation.volume93-
dc.citation.startPage131-
dc.citation.endPage136-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000373863700020-
dc.identifier.scopusid2-s2.0-84960120035-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusLAALO3/SRTIO3-
dc.subject.keywordPlusINTERFACES-
dc.subject.keywordAuthorImpedance Spectroscopy-
dc.subject.keywordAuthorMultilayered Oxide System-
dc.subject.keywordAuthorInterfacial Property-
dc.subject.keywordAuthorElectrical/Dielectric Properties-
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KIST Article > 2016
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