Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory

Authors
Yang, YimingPeng, XingyueKim, Hong-SeokKim, TaehoJeon, SanghunKang, Hang KyuChoi, WonjunSong, JindongDoh, Yong-JooYu, Dong
Issue Date
2015-09
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.15, no.9, pp.5875 - 5882
Abstract
We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10(5). The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength-dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device, which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption.
Keywords
VOLTAGE; BAND; VOLTAGE; BAND; Nanowire; hot carriers; negative photoconductance; indium arsenide; scanning photocurrent microscopy; nonvolatile memory
ISSN
1530-6984
URI
https://pubs.kist.re.kr/handle/201004/125082
DOI
10.1021/acs.nanolett.5b01962
Appears in Collections:
KIST Article > 2015
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