Influence of Shell Thickness on the Performance of Light-Emitting Devices Based on CdSe/Zn1-XCdXS Core/Shell Heterostructured Quantum Dots

Abstract

CdSe/Zn1-XCdXS core/shell heterostructured quantum dots (QDs) with varying shell thicknesses are studied as the active material in a series of electroluminescent devices. "Giant" CdSe/Zn1-XCdXS QDs (e.g., CdSe core radius of 2 nm and Zn1-XCdXS shell thickness of 6.3 nm) demonstrate a high device efficiency (peak EQE = 7.4%) and a record-high brightness (>100 000 cd m(-2)) of deep-red emission, along with improved device stability.