Metal catalyst-assisted growth of GaN nanowires on graphene films for flexible photocatalyst applications

Authors
Park, Jun BeomKim, Nam-JungKim, Yong-JinLee, Sang-HyupYi, Gyu-Chul
Issue Date
2014-11
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.14, no.11, pp.1437 - 1442
Abstract
We report the growth of high-areal-density GaN nanowires on large-size graphene films using a nickel (Ni) catalyst-assisted vapor-liquid-solid (VLS) method. Before the nanowire growth, the graphene films were prepared on copper foils using hot-wall chemical vapor deposition and transferred onto SiO2/Si substrates. Then, for catalyst-assisted VLS growth, Ni catalyst layers with thickness of a few nanometers were deposited on the graphene-coated substrates using a thermal evaporator. We investigated the effect of the Ni catalyst thickness on the formation of GaN nanowires. Furthermore, the structural and optical characteristics of GaN nanowires were investigated using X-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopy. The GaN nanowires grown on graphene films were transferred onto polymer substrates using a simple lift-off method for applications as flexible photocatalysts. Photocatalysis activities of the GaN nanowires prepared on the flexible polymer substrates were investigated under bending conditions. (C) 2014 Elsevier B.V. All rights reserved.
Keywords
MOLECULAR-BEAM EPITAXY; ARRAYS; MOLECULAR-BEAM EPITAXY; ARRAYS; GaN; Nanowire; Graphene; Photocatalyst
ISSN
1567-1739
URI
https://pubs.kist.re.kr/handle/201004/126176
DOI
10.1016/j.cap.2014.08.007
Appears in Collections:
KIST Article > 2014
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