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dc.contributor.authorShin, Changhwan-
dc.contributor.authorLee, Gwang-Geun-
dc.contributor.authorHan, Dae-Hee-
dc.contributor.authorHan, Seung-Pil-
dc.contributor.authorTokumitsu, Eisuke-
dc.contributor.authorOhmi, Shun-Ichiro-
dc.contributor.authorKim, Dong-Joo-
dc.contributor.authorIshiwara, Hiroshi-
dc.contributor.authorPark, Minseo-
dc.contributor.authorKim, Seung-Hyun-
dc.contributor.authorLee, Wan-Gyu-
dc.contributor.authorHwang, Yun Jeong-
dc.contributor.authorPark, Byung-Eun-
dc.date.accessioned2024-01-20T09:31:32Z-
dc.date.available2024-01-20T09:31:32Z-
dc.date.created2021-09-05-
dc.date.issued2014-07-
dc.identifier.issn1349-2543-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/126615-
dc.description.abstractA ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solution-based-only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (V-TH) window of similar to 20V for the transistor on paper. An on/off current ratio of similar to 10(2) is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).-
dc.languageEnglish-
dc.publisherIEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG-
dc.subjectPOLYMER-
dc.subjectMEMORY-
dc.titleExperimental demonstration of a ferroelectric FET using paper substrate-
dc.typeArticle-
dc.identifier.doi10.1587/elex.11.20140447-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEICE ELECTRONICS EXPRESS, v.11, no.14-
dc.citation.titleIEICE ELECTRONICS EXPRESS-
dc.citation.volume11-
dc.citation.number14-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000344924600004-
dc.identifier.scopusid2-s2.0-84905041411-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalResearchAreaEngineering-
dc.type.docTypeArticle-
dc.subject.keywordPlusPOLYMER-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordAuthorferroelectric transistor-
dc.subject.keywordAuthorpaper substrate-
dc.subject.keywordAuthorP(VDF-TrFE)-
dc.subject.keywordAuthorP3HT-
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