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dc.contributor.authorKim, Kyung-Ho-
dc.contributor.authorPark, Youn Ho-
dc.contributor.authorKoo, Hyun Cheol-
dc.contributor.authorChang, Joonyeon-
dc.contributor.authorKim, Young Keun-
dc.contributor.authorKim, Hyung-jun-
dc.date.accessioned2024-01-20T09:31:48Z-
dc.date.available2024-01-20T09:31:48Z-
dc.date.created2021-09-05-
dc.date.issued2014-07-
dc.identifier.issn1533-4880-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/126629-
dc.description.abstractWe have investigated gate electric field controlled Rashba spin-orbit coupling (SOC) constant (alpha) in In0.53Ga0.47As and InAs-inserted quantum well (QW) structures. More than three times larger gate controllability of alpha in the InAs-inserted QW has been observed compared to the In0.53Ga0.47As QW. The enhanced gate controllability of alpha directly results from the larger zero-field SOC in narrow band gap InAs QW. Furthermore, the lower contact resistance and higher electron mobility imply that the InAs QW is a more promising channel for spintronic device applications.-
dc.languageEnglish-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.subjectCHANNEL-
dc.subjectFIELD-
dc.titleGate-Controlled Spin-Orbit Coupling in InAs/InGaAs Quantum Well Structures-
dc.typeArticle-
dc.identifier.doi10.1166/jnn.2014.8464-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.7, pp.5212 - 5215-
dc.citation.titleJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.citation.volume14-
dc.citation.number7-
dc.citation.startPage5212-
dc.citation.endPage5215-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000332926400064-
dc.identifier.scopusid2-s2.0-84903836814-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusCHANNEL-
dc.subject.keywordPlusFIELD-
dc.subject.keywordAuthorRashba Effect-
dc.subject.keywordAuthorSpin-Orbit Coupling-
dc.subject.keywordAuthorQuantum Well-
dc.subject.keywordAuthorSpin-Field Effect Transistor-
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