Solution processed high band-gap CuInGaS2 thin film for solar cell applications

Authors
Park, Se JinCho, Jin WooLee, Joong KeeShin, KeeshikKim, Ji-HyunMin, Byoung Koun
Issue Date
2014-01
Publisher
WILEY
Citation
PROGRESS IN PHOTOVOLTAICS, v.22, no.1, pp.122 - 128
Abstract
A high band-gap (similar to 1.55eV) chalcopyrite compound film (CuInGaS2) was synthesized by a precursor solution-based coating method with an oxidation and a sulfurization heat treatment process. The film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is attributed to the formation of Ga deficient CuInGaS2 crystallites. Because of the high band-gap optical property of the CuInGaS2 absorber film, a solar cell device with this film showed a relatively high open circuit voltage (similar to 787mV) with a power conversion efficiency of 8.28% under standard irradiation conditions. Copyright (c) 2013 John Wiley & Sons, Ltd.
Keywords
LOW-COST; LOW-COST; high band-gap; CIGS; CuInxGa1-xS2; solution process; solar cells
ISSN
1062-7995
URI
https://pubs.kist.re.kr/handle/201004/127305
DOI
10.1002/pip.2354
Appears in Collections:
KIST Article > 2014
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