Twistable nonvolatile organic resistive memory devices

Authors
Song, SunghoonJang, JingonJi, YongsungPark, SungjunKim, Tae-WookSong, YounggulYoon, Myung-HanKo, Heung ChoJung, Gun-YoungLee, Takhee
Issue Date
2013-08
Publisher
ELSEVIER SCIENCE BV
Citation
ORGANIC ELECTRONICS, v.14, no.8, pp.2087 - 2092
Abstract
We fabricated an 8 x 8 cross-bar array-type organic nonvolatile memory devices on twistable poly(ethylene terephthalate) (PET) substrate. A composite of polyimide (PI) and 6-phenyl-C61 butyric acid methyl ester (PCBM) was used as the active material for the memory devices. The organic memory devices showed a high ON/OFF current ratio, reproducibility with good endurance cycle, and stability with long retention time over 5 x 10(4) s on the flat substrate. The device performance remained well under the twisted condition with a twist angle up to similar to 30 degrees. The twistable organic memory device has a potential to be utilized in more complex flexible organic device configurations. (C) 2013 Elsevier B.V. All rights reserved.
Keywords
THIN-FILMS; TRANSISTORS; POLYMER; CIRCUITS; EFFICIENT; NANOPARTICLES; BISTABILITY; INTEGRATION; ELEMENTS; THIN-FILMS; TRANSISTORS; POLYMER; CIRCUITS; EFFICIENT; NANOPARTICLES; BISTABILITY; INTEGRATION; ELEMENTS; Organic memory; Twistable; Nonvolatile; Resistive memory
ISSN
1566-1199
URI
https://pubs.kist.re.kr/handle/201004/127814
DOI
10.1016/j.orgel.2013.05.003
Appears in Collections:
KIST Article > 2013
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