Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure.

Title
Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure.
Authors
이희택최원준우덕하김선호강광남조재원
Keywords
양자우물무질서
Issue Date
1999-01
Publisher
제 6 회 광전자공학 학술회의 논문집
Citation
, 111-112
URI
http://pubs.kist.re.kr/handle/201004/12782
Appears in Collections:
KIST Publication > Conference Paper
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