Effects of suboxide layers on the electronic properties of Si(100)/SiO2 interfaces: Atomistic multi-scale approach

Authors
Kim, Byung-HyunKim, GyubongPark, KihoonShin, MincheolChung, Yong-ChaeLee, Kwang-Ryeol
Issue Date
2013-02
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.113, no.7
Abstract
A multi-scale approach connecting the atomistic process simulations to the device-level simulations has been applied to the Si(100)/SiO2 interface system. The oxidation of Si(100) surface was simulated by the atomic level molecular dynamics, the electronic structure of the resultant Si/suboxide/SiO2 interface was then obtained by the first-principles calculations, and finally, the leakage currents through the SiO2 gate dielectric were evaluated, with the obtained interface model, by the non-equilibrium Green's function method. We have found that the suboxide layers play a significant role for the electronic properties of the interface system and hence the leakage currents through the gate dielectric. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791706]
ISSN
0021-8979
URI
https://pubs.kist.re.kr/handle/201004/128380
DOI
10.1063/1.4791706
Appears in Collections:
KIST Article > 2013
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